Product Description

Interface: PCI-Express 4.0×4, NVMe 1.3
Form Factor: M.2 2280
Total Capacity: 1000GB
NAND: 3D TLC Toshiba BiCS4
External DDR Cache: DDR4 1GB
Sequential Read speed: Up to 5000 MB/s
Sequential Write speed: Up to 4400 MB/s
Random Read IOPS: up to 750k
Random Write IOPS: up to 700k
Dimension: 80.5 x 11.25 x 23.5 mm
Mean time between failure (MTBF): 1.77 million hours
Power Consumption (Active): Average: R : 6.6W; W : 6.4W
Power Consumption (Idle): 18.8mw
Temperature (Operating): 0°C to 70°C
Temperature (Storage): -40°C to 85°C